{"title":"MOSFET","description":"\u003cp\u003e\u003cspan\u003eFeatures:\u003c\/span\u003e\u003cbr\u003e\u003cbr\u003e\u003cspan\u003e■ Repetitive Avalanche Ratings\u003c\/span\u003e\u003cbr\u003e\u003cbr\u003e\u003cspan\u003e■ Dynamic dv\/dt Rating\u003c\/span\u003e\u003cbr\u003e\u003cbr\u003e\u003cspan\u003e■ Hermetically Sealed\u003c\/span\u003e\u003cbr\u003e\u003cbr\u003e\u003cspan\u003e■ Simple Drive Requirements\u003c\/span\u003e\u003cbr\u003e\u003cbr\u003e\u003cspan\u003e■ Ease of Paralleling\u003c\/span\u003e\u003c\/p\u003e","products":[{"product_id":"ncep15t14","title":"NCEP15T14","description":"\u003cp\u003e Type Designator: NCEP15T14\u003cbr\u003e   Type of Transistor: MOSFET\u003cbr\u003e   Type of Control Channel: N -Channel\u003c\/p\u003e\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003cp\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"Pd represents the capability of maximum power dissipation that a MOSFET can handle. \nMoreover, capability of power dissipation varies by different temperature conditions\"\u003ePd ⓘ\u003c\/abbr\u003e\u003cspan\u003e - Maximum Power Dissipation: 320 W\u003c\/span\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"Vds represents MOSFET absolute maximum voltage between Drain and Source. \nIn operations, voltage stress of Drain-Source should not exceed maximum rated value\"\u003e|Vds|ⓘ\u003c\/abbr\u003e\u003cspan\u003e - Maximum Drain-Source Voltage: 150 V\u003c\/span\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"Vgs represents operating driver voltage between Gate and Source. In operations, \nvoltage stress of Gate-Source should not exceed maximum rated value\"\u003e|Vgs|ⓘ\u003c\/abbr\u003e\u003cspan\u003e - Maximum Gate-Source Voltage: 20 V\u003c\/span\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"The maximum continuous current the device can carry with the mounting base \nheld continuously at 25 °C with the device fully on. This value can be related to either package construction, or the maximum \ncurrent that would result in the maximum Tj\"\u003e|Id| ⓘ\u003c\/abbr\u003e\u003cspan\u003e - Maximum Drain Current: 140 A\u003c\/span\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"Tj represents maximum operating temperature of a MOSFET. Tj should not exceed \nmaximum rated value - MOSFET parameters are outside the range of the data sheet and device lifetime is reduced\"\u003eTj ⓘ\u003c\/abbr\u003e\u003cspan\u003e - Maximum Junction Temperature: 175 °C\u003c\/span\u003e\u003c\/p\u003e\n\u003ch3\u003eElectrical Characteristics\u003c\/h3\u003e\n\u003cp\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"To measure Vgs(th) of a MOSFET, at first, short Gate pin and Drain pin, \nand then, with a given Id, and monitor the voltage difference between Gate-Source. One significant characteristics of Vgs(th) is \nits negative temperature coefficient. If power system has to be operated at a certain minus degree, to avoid unpredicted being \nturned on, Vgs(th) needs to be taken into consideration\"\u003e|Vgs(th)|\u003c\/abbr\u003e\u003cspan\u003eⓘ - Maximum Gate-Threshold Voltage: 4 V\u003c\/span\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"Qg include Qgs and Qgd. They describe how much gate charge \nthe MOSFET requires to switch, for certain conditions. This is particularly important in high frequency switching applications. \nIn high frequency operations, Qg should be selected as small as possible. Another tip of Gate charge for picking up a MOSFET \nin H-bridge power system design is that ratio of Qgd\/Qgs be lower than 1 to prevent the circuit from shoot through\"\u003eQg ⓘ\u003c\/abbr\u003e\u003cspan\u003e - Total Gate Charge: 80 nC\u003c\/span\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"The time taken for the drain-source voltage to fall from 90% to 10% \nof Vds. Id starts to rise and is considered to be the major turn-on losses during this period\"\u003etr ⓘ\u003c\/abbr\u003e\u003cspan\u003e - Rise Time: 36 nS\u003c\/span\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"Coss is the capacitance between the drain and the other two terminals \n(gate and source). Output capacitance Coss have the following relationships. Coss = Cds + Cgd\"\u003eCossⓘ\u003c\/abbr\u003e\u003cspan\u003e - Output Capacitance: 690 pF\u003c\/span\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"Drain to source resistance for specified Id when specified Vgs is applied. \nRDSon varies greatly with both Tj and Vgs\"\u003eRds ⓘ\u003c\/abbr\u003e\u003cspan\u003e - Maximum Drain-Source On-State Resistance: 0.0062 Ohm\u003c\/span\u003e\u003c\/p\u003e","brand":"AR ELECTRNICS SHABQADAR","offers":[{"title":"Default Title","offer_id":48290323398899,"sku":null,"price":135.0,"currency_code":"PKR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0801\/9060\/3507\/files\/NCEP15T14_127f6642-482d-40ed-a077-911c8db6aef3.png?v=1766637536"},{"product_id":"irfbg30","title":"IRF BG 30","description":"\u003cp\u003eType Designator: IRF BG 30\u003c\/p\u003e\n\u003cp\u003eType of Transistor: MOSFET\u003c\/p\u003e\n\u003cp\u003eType of Control Channel: N-Channel\u003c\/p\u003e\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003cp\u003e\u003cabbr data-title=\"Pd represents the capability of maximum power dissipation that a MOSFET can handle. \nMoreover, capability of power dissipation varies by different temperature conditions\"\u003ePd ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Power Dissipation: 125 W\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Vds represents MOSFET absolute maximum voltage between Drain and Source. \nIn operations, voltage stress of Drain-Source should not exceed maximum rated value\"\u003e|Vds|ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Drain-Source Voltage: 1000 V\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Vgs represents operating driver voltage between Gate and Source. In operations, \nvoltage stress of Gate-Source should not exceed maximum rated value\"\u003e|Vgs|ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Gate-Source Voltage: 20 V\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"The maximum continuous current the device can carry with the mounting base \nheld continuously at 25 °C with the device fully on. This value can be related to either package construction, or the maximum \ncurrent that would result in the maximum Tj\"\u003e|Id| ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Drain Current: 3.1 A\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Tj represents maximum operating temperature of a MOSFET. Tj should not exceed \nmaximum rated value - MOSFET parameters are outside the range of the data sheet and device lifetime is reduced\"\u003eTj ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Junction Temperature: 150 °C\u003c\/p\u003e\n\u003ch3\u003eElectrical Characteristics\u003c\/h3\u003e\n\u003cp\u003e\u003cabbr data-title=\"To measure VGSth of a MOSFET, at first, short Gate pin and Drain pin, \nand then, with a given Id, and monitor the voltage difference between Gate-Source. One significant characteristics of VGSth is \nits negative temperature coefficient. If power system has to be operated at a certain minus degree, to avoid unpredicted being \nturned on, VGSth needs to be taken into consideration\"\u003e|VGSth|ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Gate-Threshold Voltage: 4 V\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Qg include Qgs and Qgd. They describe how much gate charge \nthe MOSFET requires to switch, for certain conditions. This is particularly important in high frequency switching applications. \nIn high frequency operations, Qg should be selected as small as possible. Another tip of Gate charge for picking up a MOSFET \nin H-bridge power system design is that ratio of Qgd\/Qgs be lower than 1 to prevent the circuit from shoot through\"\u003eQg ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Total Gate Charge: 80 max nC\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"The time taken for the drain-source voltage to fall from 90% to 10% \nof Vds. Id starts to rise and is considered to be the major turn-on losses during this period\"\u003etr ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Rise Time: 25 nS\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Coss is the capacitance between the drain and the other two terminals \n(gate and source). Output capacitance Coss have the following relationships. Coss = Cds + Cgd\"\u003eCossⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Output Capacitance: 140 pF\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Drain to source resistance for specified Id when specified Vgs is applied. \nRDSon varies greatly with both Tj and Vgs\"\u003eRDSonⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Drain-Source On-State Resistance: 5 Ohm\u003ca name=\"pack\" class=\"anchor\"\u003e\u003c\/a\u003e\u003c\/p\u003e\n\u003cp\u003ePackage:\u003cspan\u003e \u003c\/span\u003e\u003ca href=\"https:\/\/alltransistors.com\/mosfet\/transistor.php?transistor=2686#img10\"\u003eTO220AB\u003c\/a\u003e\u003c\/p\u003e\n\u003cp\u003e \u003c\/p\u003e\n\u003cdiv id=\"yandex_rtb_R-A-917177-9\"\u003e\n\u003cdiv id=\"reklama\"\u003e\n\u003cp\u003e\u003cspan class=\"my-link\" data-link=\"\/\/alltransistors.com\/mosfet\/crsearch.php?\u0026amp;struct=MOSFET\u0026amp;polarity=N\u0026amp;pd=125\u0026amp;uds=1000\u0026amp;id=3.1\u0026amp;ugsth=4\u0026amp;qg=80 max\u0026amp;rds=5\u0026amp;caps=TO220AB\u0026amp;cf=on\"\u003eIRFBG30 substitution\u003c\/span\u003e\u003c\/p\u003e\n\u003c\/div\u003e\n\u003c\/div\u003e\n\u003cp\u003e-\u003cspan\u003e \u003c\/span\u003e\u003cabbr data-title=\"If links is unavailable try another browser\"\u003eMOSFET ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003eCross-Reference Search\u003c\/p\u003e","brand":"AR ELECTRNICS SHABQADAR","offers":[{"title":"Default Title","offer_id":48334560329971,"sku":null,"price":100.0,"currency_code":"PKR","in_stock":false}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0801\/9060\/3507\/files\/IRFBG30.png?v=1767547192"},{"product_id":"mosfet-hy3810","title":"MOSFET HY 3810","description":"\u003cp\u003eType Designator: HY3810\u003c\/p\u003e\n\u003cp\u003eType of Transistor: MOSFET\u003c\/p\u003e\n\u003cp\u003eType of Control Channel: N-Channel\u003c\/p\u003e\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003cp\u003e\u003cabbr data-title=\"Pd represents the capability of maximum power dissipation that a MOSFET can handle. \nMoreover, capability of power dissipation varies by different temperature conditions\"\u003ePd ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Power Dissipation: 346 W\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Vds represents MOSFET absolute maximum voltage between Drain and Source. \nIn operations, voltage stress of Drain-Source should not exceed maximum rated value\"\u003e|Vds|ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Drain-Source Voltage: 100 V\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Vgs represents operating driver voltage between Gate and Source. In operations, \nvoltage stress of Gate-Source should not exceed maximum rated value\"\u003e|Vgs|ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Gate-Source Voltage: 25 V\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"The maximum continuous current the device can carry with the mounting base \nheld continuously at 25 °C with the device fully on. This value can be related to either package construction, or the maximum \ncurrent that would result in the maximum Tj\"\u003e|Id| ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Drain Current: 180 A\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Tj represents maximum operating temperature of a MOSFET. Tj should not exceed \nmaximum rated value - MOSFET parameters are outside the range of the data sheet and device lifetime is reduced\"\u003eTj ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Junction Temperature: 175 °C\u003c\/p\u003e\n\u003ch3\u003eElectrical Characteristics\u003c\/h3\u003e\n\u003cp\u003e\u003cabbr data-title=\"To measure VGSth of a MOSFET, at first, short Gate pin and Drain pin, \nand then, with a given Id, and monitor the voltage difference between Gate-Source. One significant characteristics of VGSth is \nits negative temperature coefficient. If power system has to be operated at a certain minus degree, to avoid unpredicted being \nturned on, VGSth needs to be taken into consideration\"\u003e|VGSth|ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Gate-Threshold Voltage: 4 V\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Qg include Qgs and Qgd. They describe how much gate charge \nthe MOSFET requires to switch, for certain conditions. This is particularly important in high frequency switching applications. \nIn high frequency operations, Qg should be selected as small as possible. Another tip of Gate charge for picking up a MOSFET \nin H-bridge power system design is that ratio of Qgd\/Qgs be lower than 1 to prevent the circuit from shoot through\"\u003eQg ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Total Gate Charge: 185 nC\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"The time taken for the drain-source voltage to fall from 90% to 10% \nof Vds. Id starts to rise and is considered to be the major turn-on losses during this period\"\u003etr ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Rise Time: 45 nS\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Coss is the capacitance between the drain and the other two terminals \n(gate and source). Output capacitance Coss have the following relationships. Coss = Cds + Cgd\"\u003eCossⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Output Capacitance: 1013 pF\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Drain to source resistance for specified Id when specified Vgs is applied. \nRDSon varies greatly with both Tj and Vgs\"\u003eRDSonⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Drain-Source On-State Resistance: 0.0065 Ohm\u003ca name=\"pack\" class=\"anchor\"\u003e\u003c\/a\u003e\u003c\/p\u003e\n\u003cp\u003ePackage:\u003cspan\u003e \u003c\/span\u003e\u003ca href=\"https:\/\/alltransistors.com\/mosfet\/transistor.php?transistor=47239#img10\"\u003eTO-263\u003c\/a\u003e\u003c\/p\u003e","brand":"AR ELECTRNICS SHABQADAR","offers":[{"title":"Default Title","offer_id":48334665777395,"sku":null,"price":120.0,"currency_code":"PKR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0801\/9060\/3507\/files\/MOSFETHY3810.png?v=1767549482"},{"product_id":"nce82h140-mosfet","title":"NCE82H140 MOSFET","description":"\u003cp\u003eType Designator: NCE82H140\u003c\/p\u003e\n\u003cp\u003eType of Transistor: MOSFET\u003c\/p\u003e\n\u003cp\u003eType of Control Channel: N-Channel\u003c\/p\u003e\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003cp\u003e\u003cabbr data-title=\"Pd represents the capability of maximum power dissipation that a MOSFET can handle. \nMoreover, capability of power dissipation varies by different temperature conditions\"\u003ePd ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Power Dissipation: 220 W\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Vds represents MOSFET absolute maximum voltage between Drain and Source. \nIn operations, voltage stress of Drain-Source should not exceed maximum rated value\"\u003e|Vds|ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Drain-Source Voltage: 82 V\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Vgs represents operating driver voltage between Gate and Source. In operations, \nvoltage stress of Gate-Source should not exceed maximum rated value\"\u003e|Vgs|ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Gate-Source Voltage: 20 V\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"The maximum continuous current the device can carry with the mounting base \nheld continuously at 25 °C with the device fully on. This value can be related to either package construction, or the maximum \ncurrent that would result in the maximum Tj\"\u003e|Id| ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Drain Current: 140 A\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Tj represents maximum operating temperature of a MOSFET. Tj should not exceed \nmaximum rated value - MOSFET parameters are outside the range of the data sheet and device lifetime is reduced\"\u003eTj ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Junction Temperature: 175 °C\u003c\/p\u003e\n\u003ch3\u003eElectrical Characteristics\u003c\/h3\u003e\n\u003cp\u003e\u003cabbr data-title=\"To measure VGSth of a MOSFET, at first, short Gate pin and Drain pin, \nand then, with a given Id, and monitor the voltage difference between Gate-Source. One significant characteristics of VGSth is \nits negative temperature coefficient. If power system has to be operated at a certain minus degree, to avoid unpredicted being \nturned on, VGSth needs to be taken into consideration\"\u003e|VGSth|ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Gate-Threshold Voltage: 4 V\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Qg include Qgs and Qgd. They describe how much gate charge \nthe MOSFET requires to switch, for certain conditions. This is particularly important in high frequency switching applications. \nIn high frequency operations, Qg should be selected as small as possible. Another tip of Gate charge for picking up a MOSFET \nin H-bridge power system design is that ratio of Qgd\/Qgs be lower than 1 to prevent the circuit from shoot through\"\u003eQg ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Total Gate Charge: 158 nC\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"The time taken for the drain-source voltage to fall from 90% to 10% \nof Vds. Id starts to rise and is considered to be the major turn-on losses during this period\"\u003etr ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Rise Time: 42 nS\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Coss is the capacitance between the drain and the other two terminals \n(gate and source). Output capacitance Coss have the following relationships. Coss = Cds + Cgd\"\u003eCossⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Output Capacitance: 445 pF\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Drain to source resistance for specified Id when specified Vgs is applied. \nRDSon varies greatly with both Tj and Vgs\"\u003eRDSonⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Drain-Source On-State Resistance: 0.0052 Ohm\u003ca name=\"pack\" class=\"anchor\"\u003e\u003c\/a\u003e\u003c\/p\u003e\n\u003cp\u003ePackage:\u003cspan\u003e \u003c\/span\u003e\u003ca href=\"https:\/\/alltransistors.com\/mosfet\/transistor.php?transistor=58485#img10\"\u003eTO263\u003c\/a\u003e\u003c\/p\u003e","brand":"AR ELECTRNICS SHABQADAR","offers":[{"title":"Default Title","offer_id":48338682052851,"sku":null,"price":85.0,"currency_code":"PKR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0801\/9060\/3507\/files\/NCE82H140MOSFET.png?v=1767673682"},{"product_id":"fhp740-mosfet","title":"FHP740 MOSFET","description":"\u003ch2\u003eFHP740 Specs and Replacement\u003c\/h2\u003e\n\u003cp\u003eType Designator: FHP740\u003c\/p\u003e\n\u003cp\u003eType of Transistor: MOSFET\u003c\/p\u003e\n\u003cp\u003eType of Control Channel: N-Channel\u003c\/p\u003e\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003cp\u003e\u003cabbr data-title=\"Pd represents the capability of maximum power dissipation that a MOSFET can handle. \nMoreover, capability of power dissipation varies by different temperature conditions\"\u003ePd ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Power Dissipation: \u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Vds represents MOSFET absolute maximum voltage between Drain and Source. \nIn operations, voltage stress of Drain-Source should not exceed maximum rated value\"\u003e|Vds|ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Drain-Source Voltage: 400 V\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Vgs represents operating driver voltage between Gate and Source. In operations, \nvoltage stress of Gate-Source should not exceed maximum rated value\"\u003e|Vgs|ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Gate-Source Voltage: 30 V\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"The maximum continuous current the device can carry with the mounting base \nheld continuously at 25 °C with the device fully on. This value can be related to either package construction, or the maximum \ncurrent that would result in the maximum Tj\"\u003e|Id| ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Drain Current: 7 A\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Tj represents maximum operating temperature of a MOSFET. Tj should not exceed \nmaximum rated value - MOSFET parameters are outside the range of the data sheet and device lifetime is reduced\"\u003eTj ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Junction Temperature: 150 °C\u003c\/p\u003e\n\u003ch3\u003eElectrical Characteristics\u003c\/h3\u003e\n\u003cp\u003e\u003cabbr data-title=\"To measure VGSth of a MOSFET, at first, short Gate pin and Drain pin, \nand then, with a given Id, and monitor the voltage difference between Gate-Source. One significant characteristics of VGSth is \nits negative temperature coefficient. If power system has to be operated at a certain minus degree, to avoid unpredicted being \nturned on, VGSth needs to be taken into consideration\"\u003e|VGSth|ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Gate-Threshold Voltage: 4 V\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Drain to source resistance for specified Id when specified Vgs is applied. \nRDSon varies greatly with both Tj and Vgs\"\u003eRDSonⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Drain-Source On-State Resistance: 0.58 Ohm\u003ca name=\"pack\" class=\"anchor\"\u003e\u003c\/a\u003e\u003c\/p\u003e\n\u003cp\u003ePackage:\u003cspan\u003e \u003c\/span\u003e\u003ca href=\"https:\/\/alltransistors.com\/mosfet\/transistor.php?transistor=25550#img10\"\u003eTO220AB\u003c\/a\u003e\u003c\/p\u003e","brand":"AR ELECTRNICS SHABQADAR","offers":[{"title":"Default Title","offer_id":48341309915379,"sku":null,"price":100.0,"currency_code":"PKR","in_stock":false}]},{"product_id":"65t130","title":"65T130","description":"\u003ch2 data-start=\"196\" data-end=\"235\"\u003e65T130 MOSFET — Basic Information\u003c\/h2\u003e\n\u003cp data-start=\"236\" data-end=\"390\"\u003e\u003cstrong data-start=\"236\" data-end=\"245\"\u003eType:\u003c\/strong\u003e N-Channel Power MOSFET\u003cbr data-start=\"268\" data-end=\"271\"\u003e\u003cstrong data-start=\"271\" data-end=\"286\"\u003eTechnology:\u003c\/strong\u003e Super-Junction (high-efficiency switching)\u003cbr data-start=\"329\" data-end=\"332\"\u003e\u003cstrong data-start=\"332\" data-end=\"351\"\u003eCommon Package:\u003c\/strong\u003e TO-247 (big 3-pin body with metal tab)\u003c\/p\u003e\n\u003ch3 data-start=\"392\" data-end=\"417\"\u003e✅ Main Specifications\u003c\/h3\u003e\n\u003cp data-start=\"418\" data-end=\"450\"\u003e(typical values from datasheets)\u003c\/p\u003e\n\u003cul data-start=\"452\" data-end=\"738\"\u003e\n\u003cli data-start=\"452\" data-end=\"493\"\u003e\n\u003cp data-start=\"454\" data-end=\"493\"\u003e\u003cstrong data-start=\"454\" data-end=\"485\"\u003eDrain-Source Voltage (VDS):\u003c\/strong\u003e 650 V\u003c\/p\u003e\n\u003c\/li\u003e\n\u003cli data-start=\"494\" data-end=\"575\"\u003e\n\u003cp data-start=\"496\" data-end=\"575\"\u003e\u003cstrong data-start=\"496\" data-end=\"530\"\u003eContinuous Drain Current (ID):\u003c\/strong\u003e about \u003cstrong data-start=\"537\" data-end=\"552\"\u003e18 A – 28 A\u003c\/strong\u003e (depends on version)\u003c\/p\u003e\n\u003c\/li\u003e\n\u003cli data-start=\"576\" data-end=\"625\"\u003e\n\u003cp data-start=\"578\" data-end=\"625\"\u003e\u003cstrong data-start=\"578\" data-end=\"608\"\u003eGate-Source Voltage (VGS):\u003c\/strong\u003e ±20 V to ±30 V\u003c\/p\u003e\n\u003c\/li\u003e\n\u003cli data-start=\"626\" data-end=\"665\"\u003e\n\u003cp data-start=\"628\" data-end=\"665\"\u003e\u003cstrong data-start=\"628\" data-end=\"650\"\u003ePower Dissipation:\u003c\/strong\u003e up to ~260 W\u003c\/p\u003e\n\u003c\/li\u003e\n\u003cli data-start=\"666\" data-end=\"704\"\u003e\n\u003cp data-start=\"668\" data-end=\"704\"\u003e\u003cstrong data-start=\"668\" data-end=\"684\"\u003eLow RDS(on):\u003c\/strong\u003e for low heat loss\u003c\/p\u003e\n\u003c\/li\u003e\n\u003cli data-start=\"705\" data-end=\"738\"\u003e\n\u003cp data-start=\"707\" data-end=\"738\"\u003e\u003cstrong data-start=\"707\" data-end=\"716\"\u003eType:\u003c\/strong\u003e Fast switching MOSFET\u003c\/p\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp data-start=\"740\" data-end=\"893\"\u003eThese devices use advanced trench\/super-junction technology for \u003cstrong data-start=\"804\" data-end=\"836\"\u003elow loss and high efficiency\u003c\/strong\u003e in power circuits.\u003c\/p\u003e","brand":"AR ELECTRNICS SHABQADAR","offers":[{"title":"Default Title","offer_id":48509648208115,"sku":null,"price":120.0,"currency_code":"PKR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0801\/9060\/3507\/files\/65t130_1.jpg?v=1771044989"},{"product_id":"mosfet-65t130","title":"MOSFET 65T130","description":"\u003cp\u003eMOSFET 65T130\u003c\/p\u003e\n\u003cp\u003e \u003c\/p\u003e\n\u003cp\u003eMOSFET 65T130\u003c\/p\u003e","brand":"AR ELECTRNICS SHABQADAR","offers":[{"title":"Default Title","offer_id":48521438593267,"sku":null,"price":130.0,"currency_code":"PKR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0801\/9060\/3507\/files\/MOSFET65T130_2.jpg?v=1771402705"},{"product_id":"nce-82h140","title":"NCE 82H140","description":"\u003cp\u003eNCE 82H140\u003c\/p\u003e\n\u003cp\u003eNCE 82H140\u003c\/p\u003e\n\u003cp\u003eNCE 82H140\u003c\/p\u003e","brand":"AR ELECTRNICS SHABQADAR","offers":[{"title":"Default Title","offer_id":48920364450035,"sku":null,"price":90.0,"currency_code":"PKR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0801\/9060\/3507\/files\/NCE82H140_2.jpg?v=1778148479"}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0801\/9060\/3507\/collections\/NCEP15T14_e2bffa9d-489f-4c86-9697-9f4311902254.png?v=1766813037","url":"https:\/\/arelectronicssqd.com\/collections\/components-example-products.oembed","provider":"AR ELECTRNICS SHABQADAR","version":"1.0","type":"link"}