{"product_id":"fhp740-mosfet","title":"FHP740 MOSFET","description":"\u003ch2\u003eFHP740 Specs and Replacement\u003c\/h2\u003e\n\u003cp\u003eType Designator: FHP740\u003c\/p\u003e\n\u003cp\u003eType of Transistor: MOSFET\u003c\/p\u003e\n\u003cp\u003eType of Control Channel: N-Channel\u003c\/p\u003e\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003cp\u003e\u003cabbr data-title=\"Pd represents the capability of maximum power dissipation that a MOSFET can handle. \nMoreover, capability of power dissipation varies by different temperature conditions\"\u003ePd ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Power Dissipation: \u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Vds represents MOSFET absolute maximum voltage between Drain and Source. \nIn operations, voltage stress of Drain-Source should not exceed maximum rated value\"\u003e|Vds|ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Drain-Source Voltage: 400 V\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Vgs represents operating driver voltage between Gate and Source. In operations, \nvoltage stress of Gate-Source should not exceed maximum rated value\"\u003e|Vgs|ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Gate-Source Voltage: 30 V\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"The maximum continuous current the device can carry with the mounting base \nheld continuously at 25 °C with the device fully on. This value can be related to either package construction, or the maximum \ncurrent that would result in the maximum Tj\"\u003e|Id| ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Drain Current: 7 A\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Tj represents maximum operating temperature of a MOSFET. Tj should not exceed \nmaximum rated value - MOSFET parameters are outside the range of the data sheet and device lifetime is reduced\"\u003eTj ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Junction Temperature: 150 °C\u003c\/p\u003e\n\u003ch3\u003eElectrical Characteristics\u003c\/h3\u003e\n\u003cp\u003e\u003cabbr data-title=\"To measure VGSth of a MOSFET, at first, short Gate pin and Drain pin, \nand then, with a given Id, and monitor the voltage difference between Gate-Source. One significant characteristics of VGSth is \nits negative temperature coefficient. If power system has to be operated at a certain minus degree, to avoid unpredicted being \nturned on, VGSth needs to be taken into consideration\"\u003e|VGSth|ⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Gate-Threshold Voltage: 4 V\u003c\/p\u003e\n\u003cp\u003e\u003cabbr data-title=\"Drain to source resistance for specified Id when specified Vgs is applied. \nRDSon varies greatly with both Tj and Vgs\"\u003eRDSonⓘ\u003c\/abbr\u003e\u003cspan\u003e \u003c\/span\u003e- Maximum Drain-Source On-State Resistance: 0.58 Ohm\u003ca name=\"pack\" class=\"anchor\"\u003e\u003c\/a\u003e\u003c\/p\u003e\n\u003cp\u003ePackage:\u003cspan\u003e \u003c\/span\u003e\u003ca href=\"https:\/\/alltransistors.com\/mosfet\/transistor.php?transistor=25550#img10\"\u003eTO220AB\u003c\/a\u003e\u003c\/p\u003e","brand":"AR ELECTRNICS SHABQADAR","offers":[{"title":"Default Title","offer_id":48341309915379,"sku":null,"price":100.0,"currency_code":"PKR","in_stock":false}],"url":"https:\/\/arelectronicssqd.com\/products\/fhp740-mosfet","provider":"AR ELECTRNICS SHABQADAR","version":"1.0","type":"link"}