{"product_id":"ncep15t14","title":"NCEP15T14","description":"\u003cp\u003e Type Designator: NCEP15T14\u003cbr\u003e   Type of Transistor: MOSFET\u003cbr\u003e   Type of Control Channel: N -Channel\u003c\/p\u003e\n\u003ch3\u003eAbsolute Maximum Ratings\u003c\/h3\u003e\n\u003cp\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"Pd represents the capability of maximum power dissipation that a MOSFET can handle. \nMoreover, capability of power dissipation varies by different temperature conditions\"\u003ePd ⓘ\u003c\/abbr\u003e\u003cspan\u003e - Maximum Power Dissipation: 320 W\u003c\/span\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"Vds represents MOSFET absolute maximum voltage between Drain and Source. \nIn operations, voltage stress of Drain-Source should not exceed maximum rated value\"\u003e|Vds|ⓘ\u003c\/abbr\u003e\u003cspan\u003e - Maximum Drain-Source Voltage: 150 V\u003c\/span\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"Vgs represents operating driver voltage between Gate and Source. In operations, \nvoltage stress of Gate-Source should not exceed maximum rated value\"\u003e|Vgs|ⓘ\u003c\/abbr\u003e\u003cspan\u003e - Maximum Gate-Source Voltage: 20 V\u003c\/span\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"The maximum continuous current the device can carry with the mounting base \nheld continuously at 25 °C with the device fully on. This value can be related to either package construction, or the maximum \ncurrent that would result in the maximum Tj\"\u003e|Id| ⓘ\u003c\/abbr\u003e\u003cspan\u003e - Maximum Drain Current: 140 A\u003c\/span\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"Tj represents maximum operating temperature of a MOSFET. Tj should not exceed \nmaximum rated value - MOSFET parameters are outside the range of the data sheet and device lifetime is reduced\"\u003eTj ⓘ\u003c\/abbr\u003e\u003cspan\u003e - Maximum Junction Temperature: 175 °C\u003c\/span\u003e\u003c\/p\u003e\n\u003ch3\u003eElectrical Characteristics\u003c\/h3\u003e\n\u003cp\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"To measure Vgs(th) of a MOSFET, at first, short Gate pin and Drain pin, \nand then, with a given Id, and monitor the voltage difference between Gate-Source. One significant characteristics of Vgs(th) is \nits negative temperature coefficient. If power system has to be operated at a certain minus degree, to avoid unpredicted being \nturned on, Vgs(th) needs to be taken into consideration\"\u003e|Vgs(th)|\u003c\/abbr\u003e\u003cspan\u003eⓘ - Maximum Gate-Threshold Voltage: 4 V\u003c\/span\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"Qg include Qgs and Qgd. They describe how much gate charge \nthe MOSFET requires to switch, for certain conditions. This is particularly important in high frequency switching applications. \nIn high frequency operations, Qg should be selected as small as possible. Another tip of Gate charge for picking up a MOSFET \nin H-bridge power system design is that ratio of Qgd\/Qgs be lower than 1 to prevent the circuit from shoot through\"\u003eQg ⓘ\u003c\/abbr\u003e\u003cspan\u003e - Total Gate Charge: 80 nC\u003c\/span\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"The time taken for the drain-source voltage to fall from 90% to 10% \nof Vds. Id starts to rise and is considered to be the major turn-on losses during this period\"\u003etr ⓘ\u003c\/abbr\u003e\u003cspan\u003e - Rise Time: 36 nS\u003c\/span\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"Coss is the capacitance between the drain and the other two terminals \n(gate and source). Output capacitance Coss have the following relationships. Coss = Cds + Cgd\"\u003eCossⓘ\u003c\/abbr\u003e\u003cspan\u003e - Output Capacitance: 690 pF\u003c\/span\u003e\u003cbr\u003e\u003cspan\u003e   \u003c\/span\u003e\u003cabbr data-title=\"Drain to source resistance for specified Id when specified Vgs is applied. \nRDSon varies greatly with both Tj and Vgs\"\u003eRds ⓘ\u003c\/abbr\u003e\u003cspan\u003e - Maximum Drain-Source On-State Resistance: 0.0062 Ohm\u003c\/span\u003e\u003c\/p\u003e","brand":"AR ELECTRNICS SHABQADAR","offers":[{"title":"Default Title","offer_id":48290323398899,"sku":null,"price":135.0,"currency_code":"PKR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0801\/9060\/3507\/files\/NCEP15T14_127f6642-482d-40ed-a077-911c8db6aef3.png?v=1766637536","url":"https:\/\/arelectronicssqd.com\/products\/ncep15t14","provider":"AR ELECTRNICS SHABQADAR","version":"1.0","type":"link"}