65T130

65T130 MOSFET — Basic Information

Type: N-Channel Power MOSFET
Technology: Super-Junction (high-efficiency switching)
Common Package: TO-247 (big 3-pin body with metal tab)

✅ Main Specifications

(typical values from datasheets)

• Drain-Source Voltage (VDS): 650 V

• Continuous Drain Current (ID): about 18 A – 28 A (depends on version)

• Gate-Source Voltage (VGS): ±20 V to ±30 V

• Power Dissipation: up to ~260 W

• Low RDS(on): for low heat loss

• Type: Fast switching MOSFET

These devices use advanced trench/super-junction technology for low loss and high efficiency in power circuits.