NCE82H140 MOSFET

Type Designator: NCE82H140

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 82 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 158 nC

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 445 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: TO263